Analysis of quantum effects in nonuniformly doped MOS structures

IEEE Transactions on Electron Devices

Volumn 45, Issue 4, 1998, Pages 877-880

  Fiegna, Claudio ^a   Abramo, Antonio ^b,c  

^a UNIVERSITY OF FERRARA   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c UNIVERSITY OF UDINE   (Italy)

Author keywords

MOS devices; Quantization; Silicon

Indexed keywords

CHANNEL DOPINGS; EFFECTIVE MOBILITIES; LOW FIELD; MOS STRUCTURE; QUANTIZATION; QUANTUM EFFECTS; SELF-CONSISTENT SOLUTION; THRESHOLD VOLTAGE SHIFTS; SCHRODINGER AND POISSON EQUATIONS;

MOS DEVICES; POISSON EQUATION; QUANTUM ELECTRONICS; SILICON; HIGH ELECTRON MOBILITY TRANSISTORS;

SEMICONDUCTING SILICON; QUANTUM ELECTRONICS;

EID: 0001128988     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.662794     Document Type: Article

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