Scaled silicon MOSFET's: Degradation of the total gate capacitance

IEEE Transactions on Electron Devices

Volumn 44, Issue 4, 1997, Pages 584-587

  Vasileska, Dragica ^b   Schroder, Dieter K ^a,b   Ferry, David K ^a,b  

^a IEEE

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CAPACITANCE; CORRELATION THEORY; DEGRADATION; INTERPOLATION; MATHEMATICAL MODELS; OXIDES; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICA;

EXCHANGE CORRELATION EFFECTS; INVERSION LAYER; TOTAL GATE CAPACITANCE;

MOSFET DEVICES;

EID: 0031117193     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.563362     Document Type: Article

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