Ensemble monte carlo study of interface-state generation in low-voltage scaled silicon mos devices

IEEE Transactions on Electron Devices

Volumn 43, Issue 7, 1996, Pages 1123-1132

  Ellis Monaghan, John J ^a   Hulfachor, R B ^b   Kim, K W ^a   Littlejohn, Michael A ^b  

^a North Carolina State University   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; CORRELATION THEORY; ELECTRONIC PROPERTIES; ELECTRONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING SILICON;

ELECTRON TRAPPING; ENERGY BALANCED HYDRODYNAMIC SIMULATION; HOT ELECTRON INJECTION; INTERFACE STATE DENSITY PROFILES;

MOSFET DEVICES;

EID: 0030196623     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.502424     Document Type: Article

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