Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers

IEEE Electron Device Letters

Volumn 18, Issue 5, 1997, Pages 206-208

  Chindalore, G ^a   Hareland, S A ^a   Jallepalli, S ^b   Tasch Jr , A F ^a   Maziar, C M ^a   Chia, V K F ^c   Smith, S ^c  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b MOTOROLA INC   (United States)

^c CHARLES EVANS AND ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDES; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

CAPACITANCE VOLTAGE CHARACTERISTICS; HOLE INVERSION LAYERS; QUANTUM MECHANICAL EFFECTS;

MOS DEVICES;

EID: 0031146748     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.568765     Document Type: Article

References (12)

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