Analysis of the MOS transistor based on the self-consistent solution to the schrödinger and poisson equations and on the local mobility model

IEEE Transactions on Electron Devices

Volumn 45, Issue 6, 1998, Pages 1263-1271

  Janik, Tomasz ^a   Majkusiak, Bogdan ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Modeling; Mosfet's; Numerical analysis; Quantization; Semiconductor device modeling

Indexed keywords

APPROXIMATION THEORY; CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS;

POISSON EQUATIONS; SCHRODINGER EQUATIONS;

MOSFET DEVICES;

EID: 0032095761     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678531     Document Type: Article

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