Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 365-368

  Suemitsu, Tetsuya ^a   Enoki, Takatomo ^a   Tomizawa, Masaaki ^a   Shigekawa, Naoteru ^a   Ishii, Yasunobu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ESTIMATION; ETCHING; IONIZATION OF SOLIDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SURFACE STRUCTURE;

KINK EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030698966     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)