Generation mechanism of gate leakage current due to reverse-voltage stress in i-AlGaAs/n-GaAs HIGFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 14-20

  Takatani, Shinichiro ^a   Matsumoto, Hidetoshi ^a   Shigeta, Junji ^a   Ohshika, Katsushi ^a   Yamashita, Tomoko ^a   Fukui, Munetoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); HOT CARRIERS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; SURFACE TREATMENT;

HETEROSTRUCTURE INSULATED GATE FIELD EFFECT TRANSISTORS (HIGFET); REVERSE VOLTAGE STRESS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0031646684     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658806     Document Type: Article

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