On the correlation between drain and gate currents and light emission in GaAs PHEMTs biased in the impact ionization regime

Journal of Physics D: Applied Physics

Volumn 31, Issue 3, 1998, Pages 276-281

  Cova, P ^a   Menozzi, R ^a   Pavesi, M ^a   Pavesi, S ^a   Manfredi, M ^a   Fantini, F ^a  

^a UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; ELECTRIC CURRENTS; ELECTROLUMINESCENCE; GATES (TRANSISTOR); IONIZATION; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032492033     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/3/004     Document Type: Article

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