Charge transport by the ion shunt effect

IEEE Transactions on Nuclear Science

Volumn 33, Issue 6, 1986, Pages 1560-1564

  Knudson, A R ^a   Campbell, A B ^a   Stapor, W J ^a   Hauser, J R ^b   Jessee, M ^c   Shapiro, P ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; LOGIC DEVICES - RADIATION EFFECTS;

CHARGE COLLECTION; CHARGE TRANSPORT; ION SHUNT EFFECT; IONIZATION TRACKS;

SEMICONDUCTOR DEVICES;

EID: 0022865246     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1986.4334641     Document Type: Article

References (8)

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2. J.R. Hauser, S.E. Diehl-Nagle, A.R. Knudson, A.B. Campbell, W.J. Stapor, and P. Shapiro, “Ion Track Shunt Effects in Multi-Junction Structures,” IEEE Trans. Nucl. Sci., NS-32, p. 4115, December, 1985.
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7. G.C. Messenger, “Collection of Charge on Junction Nodes from Ion Tracks,” IEEE Trans. Nucl. Sci., NS-29, p.2024, 1982.
8. R.N. Hamm, J.E. Turner, H.A. Wright, and R.H. Ritchie, “Heavy-Ion Track Structure in Silicon,” IEEE Trans. Nucl. Sci., NS-26, p. 4892, 1979.