Nuclear Microprobe Imaging of Single-Event Upsets

IEEE Transactions on Nuclear Science

Volumn 39, Issue 1, 1992, Pages 7-12

  Horn, K M ^a   Doyle, B L ^a   Sexton, Fred W ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IMAGING TECHNIQUES; NUCLEAR INSTRUMENTATION; SEMICONDUCTOR DEVICES--RADIATION HARDENING;

NUCLEAR MICROPROBE IMAGING; SINGLE EVENT UPSETS;

INTEGRATED CIRCUITS;

EID: 0026817842     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.120129     Document Type: Article

References (14)

1. E. L. Petersen and P. W. Marshall, “Single event phenomena in the space and SDI arenas,” J. Rad. Effects: Res. Eng., Vol. 6, No. 2, p. 1, 1988.
2. B. L. Doyle, “The nuclear microprobe and its applications to controlled fusion research,” J. Vac. Sci. Technol., Vol. A3, p. 1374, 1985.
3. A. E. Pontau, A. J. Antolak, D. H. Morse, A. A. Ver Berkmoes, J. M. Brase, D. W. Heikkinen, H. E. Martz, and I. D. Proctor, “Ion microbeam tomography,” Nucl. Instrum. Methods, vol. B40/41, p. 646, 1989.
4. A. B. Campbell, A. R. Knudson, and E. A. Wolicki, “Investigation of soft upsets in MOS memories with a microbeam,” Nucl. Instrum. Methods, Vol. 191, p. 437, 1981.
5. A. B. Campbell and A. R. Knudson, “Charge collection measurements for energetic ions in silicon,” IEEE Trans. Nucl. Sci., Vol. NS-29, No. 6, p. 2067, 1982.
6. A. R. Knudson and A. B. Campbell, “Charge collection in bipolar transistors,” IEEE Trans. Nucl. Sci., Vol. NS-34, No. 6, p. 1246, 1987.
7. D. S. Yaney, J. T. Nelson, and L. L. Vanskike, “Alpha-particle tracks in silicon and their effect on dynamic MOS RAM reliability,” IEEE Trans. Electron Devices, Vol. ED-26, p. 10, 1979.
8. S. Buchner, K. Kang, W. J. Stapor, A. B. Campbell, A. R. Knudson, P. McDonald, and S. Rivet, “Pulsed laser-induced SEU in integrated circuits: A practical method for hardness asurance testing,” IEEE Trans. Nucl. Sci., Vol. 37, No. 6, p. 1825, 1990.
9. H. T. Weaver, C. L. Axness, J. D. McBrayer, J. S. Browning, J. S. Fu, A. Ochoa, Jr., and R. Koga, “An SEU tolerant memory cell derived from fundamental studies of SEU mechanisms in SRAMs,” IEEE Trans. Nucl. Sci., Vol. NS-34, No. 6, p. 1281, 1987.
10. C. M. Hsieh, P. C. Murley, and R. R. O’Brien, “A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices,” IEEE Electron Device Lett., Vol. EDL-2, No. 4, p. 103, 1981.
11. F. W. Sexton, R. K. Treece, K. J. Hass, K. H. Hughes, G. L. Hash, C. L. Axness, S. P. Buchner, and K. Kang, “SEU characterization and design dependence of the SA3300 microprocessor,” IEEE Trans. Nucl. Sci., Vol. 37, p. 1861, 1990.
12. B. L. Doyle and N. D. Wing, “The Sandia nuclear microprobe,” Sandia Rep. SAND82-2393, 1982.
13. G. Bench, K. A. Nugent, M. Cholewa, A. Saint, and G. J. F. Legge, “Submicron STIM tomography reconstruction techniques,” Nucl. Instrum. Methods, Vol. B54, 390, 1991.
14. B. E. Fischer, “Single-particle techniques,” Nucl. Instrum. Methods, Vol. B54, p. 401, 1991.