Ion track shunt effects in multi-junction structures

IEEE Transactions on Nuclear Science

Volumn 32, Issue 6, 1985, Pages 4115-4121

  Knudson, A R ^b   Campbell, A B ^b   Stapor, W J ^b   Shapiro, P ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77957230665     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1985.4334078     Document Type: Article

References (10)

1. G. C. Messenger, “Collection of Charge on Junction Nodes from Ion Track,’ IEEE Trans. Nucl. Sci., NS-29, 2024 (1982).
2. T. R. Oldham and F. B. McLean, “Charge Collection Measurements for Heavy Ions Incident on n-and p-type Silicon,” IEEE Trans. Nucl. Sci., NS- 30, 4493 (1983). NS-
3. C. Hu, “Alpha-Particle-Induced Field and Enhanced Collection of Carriers,” IEEE Trans. Electron Device Lett., EDL-3, 31 (1982).
4. C. M. Hsieh, P. C. Murley, and R. R. O’Brien, “A Field-Funneling Effect on the Collection of Alpha-Generated Carriers in Silicon Devices,” IEEE Elec. Devices Lett., EDL-2, 103 (1981).
5. C. M. Hsieh, P. C. Murley and R. R. O’Brien, “Collection of Charge from Alpha-Particle Tracks in Silicon Devices,” IEEE Trans. Electron De-vices, ED-30, 686 (1983).
6. A. R. Knudson, A. B. Campbell, P. Shapiro, W. J. Stapor, E. A. Wolicki, E. L. Peterson, S. E. Diehl-Nagle, J. R. Hauser and P. V. Dressendorfer, “Charge Collection in Multilayer Structures,” IEEE Trans. Nucl. Sci., NS-31, 1149 (1984). NS-31.
7. J. P. Kreskovksy and H. L. Grubin, “Simulation of Charge Collection in a Multilayer Device,” IEEE Trans. Nucl. Sci., this issue.
8. J. S. Fu, C. L. Axness and H. T. Weaver, “Two-Dimensional Dimensional Simulation of Single Event Induced Bipolar Current in CMOS Structures,” IEEE Trans. Nucl. Sci., NS-31, 1155 (1984).
9. A. R. Knudson and A. B. Campbell, “Use of an Ion Microbeam to Study Single Event Upsets in Micro-circuits,” IEEE Trans. Nucl. Sci., NS-28, 4017 (1981).
10. R. L. Johnson, Jr., S. E. Diehl-Nagle and J. R. Hauser, “Circuit Simulation Model for SEUs in Advanced CMOS SRAMs,” IEEE Trans. Nucl. Sci., this issue.