Determination of SEU Parameters of NMOS and CMOS SRAMs

IEEE Transactions on Nuclear Science

Volumn 38, Issue 6, 1991, Pages 1463-1470

  McNulty, P J ^a   Beauvais, W J ^a   Roth, D R ^a  

^a CLEMSON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL--RANDOM ACCESS; INTEGRATED CIRCUITS, CMOS; PROTONS;

CHARGE COLLECTION; SINGLE EVENT UPSETS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0026400769     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124133     Document Type: Article

References (7)

1. P.J. McNulty, “Predicting SEU Phenomena in Spaces” in 1990 IEEE Short Course: Microelectronics for the Natural Radiation Environments of Space (IEEE Nuclear Radiation Effects Committee, 1990).
2. P.J. McNulty, D.R. Roth, W.J. Beauvais, W.G. Abdel-Kader, and D.C. Dinge, “Comparison of the Charge Collecting Properties of Junctions and the SEU Response of Microelectronic Circuit” to be published in Nuclear Tracks and Radiation Measurements.
3. P.J. McNulty, D.R. Roth, W.J. Beauvais, and W.G. Abdel-Kader, “Charge Collection Spectroscopy Applied to MOS RAMS,” to be published in the proceedings of the 1991 Single Event Symposium, Ottawa, Canada.
4. R. Koga, W.A. Kolasinski, J.V. Osbourne, J.H. Elder, and R. Chitty, “SEU Testing for 256K Static RAMs and Comparison of Upsets Induced by Heavy Ions and Protons,” IEEE Trans. Nucl. Sci. NS-35, 1638–1643 (1988).
5. P.J. McNulty, W.J. Beauvais, D.R. Roth, J.E. Lynch, A. Knudson, and W. J. Stapor, “Microbeam Analysis of CMOS SRAMs” to be published in the proceedings of the RADECS Conference, September 9–12, Montpellier, France.
6. P.J. McNulty, W.G. Abdel-Kader, and J.E. Lynch, “Modeling Charge Collection and Single Event Upsets in Microelectronics”, Nuclear Instruments and Methods in Physics Research B61, 52–60 (1991).
7. E.G. Stassinopoulos, private communication.