Heavy ion microscopy of single event upsets in CMOS SRAMs

IEEE Transactions on Nuclear Science

Volumn 41, Issue 3, 1994, Pages 589-592

  Metzger, S ^a   Dreute, J ^a   Heinrich, W ^a   Rocher H ^a   Fischer, B E ^a   Harboe Sarensen, R ^a   Adams, L ^a  

^a EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRON EMISSION; FOCUSING; ION BEAMS; MICROSCOPIC EXAMINATION; PROBES; RANDOM ACCESS STORAGE; SEMICONDUCTOR JUNCTIONS; SENSITIVITY ANALYSIS; THREE DIMENSIONAL;

HEAVY ION MICROSCOPY; SCANNING ION MICROPROBE; SINGLE EVENT UPSET; UPSET MAPPING MODE;

IMAGING TECHNIQUES;

EID: 0028446648     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.299804     Document Type: Article

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