Effects of Ion Damage on IBICC and SEU Imaging

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1940-1947

  Sexton, F W ^a   Horn, K M ^b   Doyle, B L ^b   Shaneyfelt, M R ^b   Meisenheimer, T L ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DOSIMETRY; ELECTRIC CHARGE; FAILURE (MECHANICAL); IMAGING TECHNIQUES; ION BEAMS; RANDOM ACCESS STORAGE;

ION BEAM INDUCED CHARGE COLLECTION (IBICC); IONIZING DOSE DAMAGE; SINGLE EVENT UPSET (SEU);

RADIATION EFFECTS;

EID: 0029492481     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.489238     Document Type: Article

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