Single-Event Current Transients Induced by High Energy Ion Microbeams

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1935-1940

  Nashiyama, Isamu ^a   Hirao, Toshio ^a   Kamiya, Tomihiro ^a   Yutoh, Hidenori ^a   Nishijima, Toshiji ^b   Sekiguti, Hiroyoshi ^b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; IONS; MATHEMATICAL MODELS; RADIATION DAMAGE; SEMICONDUCTOR DIODES; TRANSIENTS; WAVEFORM ANALYSIS;

BIAS VOLTAGE; CHARGE COLLECTION; HIGH ENERGY ION MICROBEAMS; LINEAR ENERGY TRANSFER; SILICON DIODES; SINGLE EVENT CURRENT TRANSIENTS; SINGLE EVENT UPSET;

ION BEAMS;

EID: 0027807512     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273461     Document Type: Article

References (8)

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