Relationship Between IBICC Imaging And SEU In CMOS ICs

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1787-1794

  Sexton, F W ^a   Horn, K M ^a   Doyle, B L ^a   Laird, J S ^a,b   Cholewa, M ^a,b   Saint, A ^a,b   Legge, G J F ^a,b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; BIPOLAR TRANSISTORS; HELIUM; IMAGE ANALYSIS; IMAGING TECHNIQUES; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT TESTING; ION BEAMS; RADIATION EFFECTS; RANDOM ACCESS STORAGE; SUBSTRATES;

CHARGE AMPLIFICATION EFFECT; CHARGE COLLECTION IMAGING; HEAVY ION STRIKE; SINGLE EVENT UPSET MECHANISM;

CMOS INTEGRATED CIRCUITS;

EID: 0027874495     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273478     Document Type: Article

References (17)

1. K.M. Horn, B.L. Doyle, D.S. Walsh, and F.W. Sexton, “Application of the Nuclear Microprobe to the Imaging of Single Event Upsets in Integrated Circuits,” Scanning Microscopy, vol. 5 no. 4, 969 (1992).
2. K M. Horn, B.L. Doyle, and F.W. Sexton, “Nuclear Microprobe Imaging of Single Event Upset,” IEEE Trans Nucl. Sci. NS-39, 1, 7 (1992).
3. B.L. Doyle, K.M. Horn, D.S. Walsh, and F.W. Sexton, “Single Event Upset Imaging with a Nuclear Microprobe,” Nucl. Instru. and Methods in Phys. Res. B64, 313 (1992).
4. K.M. Horn, B.L. Doyle, F.W. Sexton, J.S. Laird, A. Saint, M. Cholewa, and G.J.F. Legge, “Ion Beam Induced Charge Collection (IBICC) Microscopy of ICs: Relation to Single Event Upset (SEU),“ Nucl. Instru. and Methods in Phys. Res. B77, 355 (1993).
5. F.W. Sexton, K.M. Horn, B.L. Doyle, J.S. Laird, M. Cholewa, A. Saint, and G.J.F. Legge, “Ion-Beam-Induced Charge-Collection (IBICC) Imaging of CMOS ICs,” Nucl. Instru. and Methods in Phys. Res. B79, 436 (1993).
6. M.B.H. Breese, G.W. Grime, and F. Watt, “Microcircuit Imaging Using Ion Beam Induced Current,” Oxford Report OUNP-91-33, 1991.
7. P.J. McNulty, “Track Structure Effects at p-n Junctions in Microelectronic Circuits,” Nucl. Tracks Radiat. diat. Meas. 16, 197 (1989).
8. P.J. McNulty, W. G. Abdel-Kader, and J. E. Lynch, “Modeling Charge Collection and Single Event Upsets in Microelectronics,” Nucl. Instru. and Methods in Phys. Res. B61, 52 (1991).
9. K.H. Lee, J.C. Desko, R.A. Kohler, C.W. Lawrence, W.J. Nagy, J.A. Shimer, S.D. Steenwyk, R.E. Anderson, and J.S. Fu, “Radiation Hard 1.0-μm CMOS Technology,” IEEE Trans. Nucl. Sci. NS-34, 1460 (1987).
10. A. R. Knudson, A. B. Campbell, P. Shapiro, W. J. Stapor, E. A. Wolicki, E. L. Petersen, S. E. Diehl-Nagle, J. Hauser, and P. V. Dressendorfer, “Charge Collection in Multilayer Structures,” IEEE Trans Nucl. Sci. NS-31, 1149 (1984).
11. J. S. Fu, C. L. Axness, and H. T. Weaver, “Memory SEU Simulations Using. 2-D Transport Calculations,” IEEE Elec. Dev. Lett. EDL-6, 422 (1985).
12. J. R. Hauser, S. E. Diehl-Nagle, A. R. Knudson, and A. B. Campbell, “Ion Track Shunt Effects in Multi-Junction Structures,” IEEE Trans Nucl. Sci. NS-32, 4115 (1985).
13. A. R. Knudson, A. B. Campbell, J. R. Hauser, M. Jessee, see, W. J. Stapor, and P. Shapiro, “Charge Transport by the Ion Shunt Effect,” IEEE Trans Nucl. Sci. NS-33, 1560 (1986).
14. TRIM version 90.05, J.F. Ziegler, and J.P. Biersack, Pergamon Press, (1990).
15. T.R. Oldham and F.B. McLean, “Charge-Collection Measurements for Heavy Ions Incident on n- and p-Type Silicon,” IEEE Trans Nucl. Sci. NS-30, 4493 (1983).
16. F.W. Sexton, W.T. Corbett, R.K. Treece, K.J. Hass, K.L. Hughes, C.L. Axness, G.L. Hash, M.R. Shaneyfelt, and T.F. Wunsch, “SEU Simulation and Testing of Resistor-Hardened D-Latches in the SA3300 Microprocessor,” IEEE Trans Nucl. Sci. NS-38, 1521 (1991).
17. H.T. Weaver, C.L. Axness, J.D. McBrayer, J.S. Browning, J.S. Fu, A. Ochoa, Jr., and R. Koga, “An SEU Tolerant Memory Cell Derived from Fundamental Studies of SEU Mechanism in SRAM,” IEEE Trans Nucl. Sci. NS-34, 1281 (1987).