Total Dose Dependence of Soft-Error Hardness in 64kbit SRAMs Evaluated by Single-Ion Microprobe Technique

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2071-2076

  Matsukawa, T ^a   Kishida, A ^a   Tanii, T ^a   Koh, M ^a   Horita, K ^a   Hara, K ^a   Shigeta, B ^a   Goto, M ^a   Ohdomari, I ^a   Matsuda, S ^b   Kuboyama, S ^b  

^a WASEDA UNIVERSITY   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR ARRAYS; CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; COMPUTER AIDED ANALYSIS; ION BEAMS; MOSFET DEVICES; PROBES; RADIATION EFFECTS; VOLTAGE CONTROL;

SINGLE ION MICROPROBE TECHNIQUE; SOFT ERROR SUSCEPTIBILITY; STATIC RANDOM ACCESS MEMORY;

RANDOM ACCESS STORAGE;

EID: 0028712008     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340544     Document Type: Article

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