Single-event upset test of static random access memory using single-ion microprobe

Japanese Journal of Applied Physics

Volumn 31, Issue 12 R, 1992, Pages 4025-4028

  Matsukawa, Takashi ^a   Noritake, Katsunori ^a   Koh, Meishoku ^a   Hara, Ken Ichi ^a   Goto, Makoto ^a   Ohdomari, Iwao ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

Aiming; Ion microprobe; Radiation effect; Single event upset; Single ion hit; Sram

Indexed keywords

INTEGRATED CIRCUIT TESTING; IONS; RADIATION DAMAGE; RANDOM ACCESS STORAGE;

SINGLE-EVENT UPSET TEST; SINGLE-ION MICROPROBE;

VLSI CIRCUITS;

EID: 0027005182     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.31.4025     Document Type: Article

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