Growth mechanism of hydrogenated amorphous silicon studied by in situ scanning tunneling microscopy

Journal of Applied Physics

Volumn 85, Issue 12, 1999, Pages 8032-8039

  Flewitt, A J ^a   Robertson, J ^a   Milne, W I ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL BONDS; COMPUTER SIMULATION; FILM GROWTH; FOURIER TRANSFORMS; HYDROGENATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SILANES; SURFACE ROUGHNESS; THERMAL EFFECTS;

HYDROGENATED AMORPHOUS SILICON FILMS;

SEMICONDUCTING FILMS;

EID: 0032606529     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370639     Document Type: Article

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