Effects of thermal treatment of low-temperature GaN buffer layers on the quality of subsequent GaN layers

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 4877-4882

  Sugiura, L ^a   Itaya, K ^a   Nishio, J ^a   Fujimoto, H ^a   Kokubun, Y ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; DEFECT FORMATION; GAN BUFFER LAYERS; GAN LAYERS; GROWTH INITIATION; GROWTH PITS; HIGH QUALITY; HIGH TEMPERATURE; LOW TEMPERATURES; METALORGANIC CHEMICAL VAPOR DEPOSITION; TEMPERATURE RAMPING; THERMAL TREATMENT;

BUFFER LAYERS; CRYSTALLINE MATERIALS; DEFECT DENSITY; DEFECTS; GALLIUM NITRIDE; HEAT TREATMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SURFACE MORPHOLOGY;

GALLIUM ALLOYS;

EID: 0000874390     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366350     Document Type: Article

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