Modelling of high temperature optical constants and surface roughness evolution during MOVPE growth of GaN using in-situ spectral reflectometry

Journal of Crystal Growth

Volumn 245, Issue 3-4, 2002, Pages 198-206

  Balmer, R S ^a   Pickering, C ^a   Pidduck, A J ^a   Martin, T ^a  

^a QINETIQ   (United Kingdom)

Author keywords

A1. Characterization; A1. Roughening; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; COALESCENCE; ELLIPSOMETRY; FILM GROWTH; HIGH TEMPERATURE EFFECTS; LIGHT REFLECTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MULTILAYERS; REFLECTOMETERS; SPECTROSCOPY; SURFACE ROUGHNESS;

SPECTRAL REFLECTOMETRY;

GALLIUM NITRIDE;

EID: 0036846521     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01685-8     Document Type: Article

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