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Volumn 245, Issue 3-4, 2002, Pages 198-206

Modelling of high temperature optical constants and surface roughness evolution during MOVPE growth of GaN using in-situ spectral reflectometry

Author keywords

A1. Characterization; A1. Roughening; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; COALESCENCE; ELLIPSOMETRY; FILM GROWTH; HIGH TEMPERATURE EFFECTS; LIGHT REFLECTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MULTILAYERS; REFLECTOMETERS; SPECTROSCOPY; SURFACE ROUGHNESS;

EID: 0036846521     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01685-8     Document Type: Article
Times cited : (40)

References (20)
  • 9
    • 0011366128 scopus 로고    scopus 로고
    • WVASE32, J.A. Woollam & Co. Inc., Lincoln, NE, USA 68508
    • WVASE32, J.A. Woollam & Co. Inc., Lincoln, NE, USA 68508.
  • 17
    • 0011280290 scopus 로고    scopus 로고
    • Personal communication
    • J.T. Zettler, Personal communication.
    • Zettler, J.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.