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Volumn 245, Issue 3-4, 2002, Pages 198-206
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Modelling of high temperature optical constants and surface roughness evolution during MOVPE growth of GaN using in-situ spectral reflectometry
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Author keywords
A1. Characterization; A1. Roughening; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
COALESCENCE;
ELLIPSOMETRY;
FILM GROWTH;
HIGH TEMPERATURE EFFECTS;
LIGHT REFLECTION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MULTILAYERS;
REFLECTOMETERS;
SPECTROSCOPY;
SURFACE ROUGHNESS;
SPECTRAL REFLECTOMETRY;
GALLIUM NITRIDE;
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EID: 0036846521
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(02)01685-8 Document Type: Article |
Times cited : (40)
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References (20)
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