Study of the effect of growth rate and annealing on GaN buffer layers on sapphire

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 225-230

  Ramer, J C ^a   Zheng, K ^a   Kranenberg, C F ^a   Banas, M ^a   Hersee, S D ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SURFACE ROUGHNESS; X RAY DIFFRACTION;

BUFFER LAYERS; CHEMICAL ACTIVITY; CRYSTALLINITY; GALLIUM NITRIDE; GROWTH RATE; POLARITY; STRANSKI-KRASTANOV GROWTH PROCESS;

NITRIDES;

EID: 0029770730     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)