Influences of initial nitridation and buffer layer deposition on the morphology of a (0001) GaN layer grown on sapphire substrates

Journal of Applied Physics

Volumn 83, Issue 2, 1998, Pages 764-767

  Fuke, Shunro ^a   Teshigawara, Hidekazu ^a   Kuwahara, Kazuhiro ^a   Takano, Yasushi ^a   Ito, Takahiro ^a   Yanagihara, Masataka ^b   Ohtsuka, Kohji ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b SANKEN ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000261524     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366749     Document Type: Article

References (11)

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