MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity

ACS Applied Materials and Interfaces

Volumn 8, Issue 13, 2016, Pages 8576-8582

  Yang, Jaehyun ^a   Kwak, Hyena ^a   Lee, Youngbin ^b   Kang, Yu Seon ^c   Cho, Mann Ho ^c   Cho, Jeong Ho ^a,b   Kim, Yong Hoon ^a,b   Jeong, Seong Jun ^d   Park, Seongjun ^d   Lee, Hoo Jeong ^a,b   Kim, Hyoungsub ^a  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Yonsei University   (South Korea)

^d SAMSUNG Electronics   (South Korea)

Author keywords

heterojunction; InGaZnO; molybdenum disulfide; phototransistor; solution based synthesis

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; ENERGY GAP; LIGHT; MOLYBDENUM COMPOUNDS; MOLYBDENUM OXIDE; OXIDE FILMS; PHOTOTRANSISTORS; SEMICONDUCTING INDIUM COMPOUNDS;

AMORPHOUS INDIUM GALLIUM ZINC OXIDES (A IGZO); HETEROJUNCTION PHOTOTRANSISTORS; HIGH CARRIER MOBILITY; HIGH MOBILITY CHANNELS; INGAZNO; MOLYBDENUM DISULFIDE; PHOTORESPONSE CHARACTERISTICS; SPECTROSCOPIC MEASUREMENTS;

HETEROJUNCTIONS;

EID: 84964626119     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b11709     Document Type: Article

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