-
1
-
-
9744248669
-
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
-
10.1038/nature03090
-
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors., Nature 432, 488-492 (2004). 10.1038/nature03090
-
(2004)
Nature
, vol.432
, pp. 488-492
-
-
Nomura, K.1
Ohta, H.2
Takagi, A.3
Kamiya, T.4
Hirano, M.5
Hosono, H.6
-
2
-
-
33748795083
-
4 channel fabricated by room temperature rf-magnetron sputtering
-
10.1063/1.2353811
-
4 channel fabricated by room temperature rf-magnetron sputtering., Appl. Phys. Lett. 89, 112123 (2006). 10.1063/1.2353811
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 112123
-
-
Yabuta, H.1
Sano, M.2
Abe, K.3
Aiba, T.4
Den, T.5
Kumomi, H.6
Nomura, K.7
Kamiya, T.8
Hosono, H.9
-
3
-
-
33745435681
-
Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
-
10.1016/j.jnoncrysol.2006.01.073
-
H. Hosono, Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application., J. Non-Cryst. Solids 352, 851-858 (2006). 10.1016/j.jnoncrysol.2006.01.073
-
(2006)
J. Non-Cryst. Solids
, vol.352
, pp. 851-858
-
-
Hosono, H.1
-
4
-
-
43049143507
-
Circuits using uniform TFTs based on amorphous In-Ga-Zn-O
-
10.1889/1.2812992
-
R. Hayashi, M. Ofuji, N. Kaji, K. Takahashi, K. Abe, H. Yabuta, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, Circuits using uniform TFTs based on amorphous In-Ga-Zn-O., J. Soc. Inf. Disp. 15, 915 (2007). 10.1889/1.2812992
-
(2007)
J. Soc. Inf. Disp.
, vol.15
, pp. 915
-
-
Hayashi, R.1
Ofuji, M.2
Kaji, N.3
Takahashi, K.4
Abe, K.5
Yabuta, H.6
Sano, M.7
Kumomi, H.8
Nomura, K.9
Kamiya, T.10
Hirano, M.11
Hosono, H.12
-
5
-
-
33744460748
-
Amorphous oxide semiconductors for high-performance flexible thin-film transistors
-
10.1143/JJAP.45.4303
-
K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, Amorphous oxide semiconductors for high-performance flexible thin-film transistors., Jpn. J. Appl. Phys., Part 1 45, 4303-4308 (2006). 10.1143/JJAP.45.4303
-
(2006)
Jpn. J. Appl. Phys., Part 1
, vol.45
, pp. 4303-4308
-
-
Nomura, K.1
Takagi, A.2
Kamiya, T.3
Ohta, H.4
Hirano, M.5
Hosono, H.6
-
6
-
-
84861829395
-
Oxide semiconductor thin-film transistors: A review of recent advances
-
10.1002/adma.201103228
-
E. Fortunato, P. Barquinha, and R. Martins, Oxide semiconductor thin-film transistors: A review of recent advances., Adv. Mater. (Deerfield Beach, FL) 24, 2945-2986 (2012). 10.1002/adma.201103228
-
(2012)
Adv. Mater. (Deerfield Beach, FL)
, vol.24
, pp. 2945-2986
-
-
Fortunato, E.1
Barquinha, P.2
Martins, R.3
-
7
-
-
80755130142
-
76.3: 32-inch LCD panel using amorphous indium-gallium-zinc-oxide TFTs
-
10.1889/1.3499858
-
H.-H. Lu, H.-C. Ting, T.-H. Shih, C.-Y. Chen, C.-S. Chuang, and Y. Lin, 76.3: 32-inch LCD panel using amorphous indium-gallium-zinc-oxide TFTs., SID Int. Symp. Digest Tech. Papers 41, 1136 (2010). 10.1889/1.3499858
-
(2010)
SID Int. Symp. Digest Tech. Papers
, vol.41
, pp. 1136
-
-
Lu, H.-H.1
Ting, H.-C.2
Shih, T.-H.3
Chen, C.-Y.4
Chuang, C.-S.5
Lin, Y.6
-
8
-
-
64149125433
-
12.1-in. WXGA AMOLED display driven by InGaZnO thin-film transistors
-
10.1889/JSID17.2.95
-
J. K. Jeong, J. H. Jeong, H. W. Yang, T. K. Ahn, M. Kim, K. S. Kim, B. S. Gu, H.-j. Chung, J.-S. Park, Y.-G. Mo, H. D. Kim, and H. K. Chung, 12.1-in. WXGA AMOLED display driven by InGaZnO thin-film transistors., J. Soc. Inf. Disp. 17, 95 (2009). 10.1889/JSID17.2.95
-
(2009)
J. Soc. Inf. Disp.
, vol.17
, pp. 95
-
-
Jeong, J.K.1
Jeong, J.H.2
Yang, H.W.3
Ahn, T.K.4
Kim, M.5
Kim, K.S.6
Gu, B.S.7
Gu, H.-J.8
Park, J.-S.9
Mo, Y.-G.10
Kim, H.D.11
Chung, H.K.12
-
9
-
-
77954735967
-
Large photoresponse in amorphous InGaZnO and origin of reversible and slow decay
-
10.1149/1.3460302
-
D. H. Lee, K.-i. Kawamura, K. Nomura, T. Kamiya, and H. Hosono, Large photoresponse in amorphous InGaZnO and origin of reversible and slow decay., Electrochem. Solid-State Lett. 13, H324 (2010). 10.1149/1.3460302
-
(2010)
Electrochem. Solid-State Lett.
, vol.13
, pp. 324
-
-
Lee, D.H.1
Kawamura, K.-I.2
Nomura, K.3
Kamiya, T.4
Hosono, H.5
-
10
-
-
84855965812
-
Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
-
10.1016/j.tsf.2011.07.018
-
J. S. Park, W.-J. Maeng, H.-S. Kim, and J.-S. Park, Review of recent developments in amorphous oxide semiconductor thin-film transistor devices., Thin Solid Films 520, 1679-1693 (2012). 10.1016/j.tsf.2011.07.018
-
(2012)
Thin Solid Films
, vol.520
, pp. 1679-1693
-
-
Park, J.S.1
Maeng, W.-J.2
Kim, H.-S.3
Park, J.-S.4
-
11
-
-
77955160907
-
O-vacancy as the origin of negative bias illumination stress instability in amorphous InGaZnO thin film transistors
-
10.1063/1.3464964
-
B. Ryu, H.-K. Noh, E.-A. Choi, and K. J. Chang, O-vacancy as the origin of negative bias illumination stress instability in amorphous InGaZnO thin film transistors., Appl. Phys. Lett. 97, 022108 (2010). 10.1063/1.3464964
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 022108
-
-
Ryu, B.1
Noh, H.-K.2
Choi, E.-A.3
Chang, K.J.4
-
12
-
-
54549084345
-
P-13: Photosensitivity of amorphous IGZO TFTs for active-matrix flat-panel displays
-
10.1889/1.3069354
-
C.-S. Chuang, T.-C. Fung, B. G. Mullins, K. Nomura, T. Kamiya, H.-P. D. Shieh, H. Hosono, and J. Kanicki, P-13: Photosensitivity of amorphous IGZO TFTs for active-matrix flat-panel displays., SID Int. Symp. Digest Tech. Papers 39, 1215 (2008). 10.1889/1.3069354
-
(2008)
SID Int. Symp. Digest Tech. Papers
, vol.39
, pp. 1215
-
-
Chuang, C.-S.1
Fung, T.-C.2
Mullins, B.G.3
Nomura, K.4
Kamiya, T.5
Shieh, H.-P.D.6
Hosono, H.7
Kanicki, J.8
-
13
-
-
78649250229
-
Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer
-
10.1063/1.3517506
-
H.-W. Zan, W.-T. Chen, H.-W. Hsueh, S.-C. Kao, M.-C. Ku, C.-C. Tsai, and H.-F. Meng, Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer., Appl. Phys. Lett. 97, 203506 (2010). 10.1063/1.3517506
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 203506
-
-
Zan, H.-W.1
Chen, W.-T.2
Hsueh, H.-W.3
Kao, S.-C.4
Ku, M.-C.5
Tsai, C.-C.6
Meng, H.-F.7
-
14
-
-
84655166978
-
High-performance light-erasable memory and real-time ultraviolet detector based on unannealed indium gallium zinc oxide thin-film transistor
-
10.1109/LED.2011.2171316
-
W.-T. Chen and H.-W. Zan, High-performance light-erasable memory and real-time ultraviolet detector based on unannealed indium gallium zinc oxide thin-film transistor., IEEE Electron Device Lett. 33, 77-79 (2012). 10.1109/LED.2011.2171316
-
(2012)
IEEE Electron Device Lett.
, vol.33
, pp. 77-79
-
-
Chen, W.-T.1
Zan, H.-W.2
-
16
-
-
0032291433
-
Improved Laplace transform method to determine trap densities from transients: Application to ZnO and films
-
10.1088/0268-1242/13/12/009
-
S. A. Studenikin, N. Golego, and M. Cocivera, Improved Laplace transform method to determine trap densities from transients: Application to ZnO and films., Semicond. Sci. Technol. 13, 1383 (1998). 10.1088/0268-1242/13/12/009
-
(1998)
Semicond. Sci. Technol.
, vol.13
, pp. 1383
-
-
Studenikin, S.A.1
Golego, N.2
Cocivera, M.3
-
17
-
-
0029293201
-
Simple analysis of transient photoconductivity for determination of localized-state distributions in amorphous semiconductors using Laplace transform
-
10.1063/1.358582
-
H. Naito and M. Okuda, Simple analysis of transient photoconductivity for determination of localized-state distributions in amorphous semiconductors using Laplace transform., J. Appl. Phys. 77, 3541 (1995). 10.1063/1.358582
-
(1995)
J. Appl. Phys.
, vol.77
, pp. 3541
-
-
Naito, H.1
Okuda, M.2
-
18
-
-
33646801605
-
Sub-bandgap photoconductivity in ZnO epilayers and extraction of trap density spectra
-
10.1088/0268-1242/21/6/001
-
K. Moazzami, T. E. Murphy, J. D. Phillips, M. C.-K. Cheung, and A. N. Cartwright, Sub-bandgap photoconductivity in ZnO epilayers and extraction of trap density spectra., Semicond. Sci. Technol. 21, 717-723 (2006). 10.1088/0268-1242/21/6/001
-
(2006)
Semicond. Sci. Technol.
, vol.21
, pp. 717-723
-
-
Moazzami, K.1
Murphy, T.E.2
Phillips, J.D.3
Cheung, M.C.-K.4
Cartwright, A.N.5
-
19
-
-
0000499703
-
Saturation of the light-induced defect density in hydrogenated amorphous silicon
-
10.1063/1.101965
-
H. R. Park, J. Z. Liu, and S. Wagner, Saturation of the light-induced defect density in hydrogenated amorphous silicon., Appl. Phys. Lett. 55, 2658 (1989). 10.1063/1.101965
-
(1989)
Appl. Phys. Lett.
, vol.55
, pp. 2658
-
-
Park, H.R.1
Liu, J.Z.2
Wagner, S.3
-
20
-
-
0007994139
-
Evidence for a stretched-exponential description of optical defect generation in hydrogenated amorphous silicon
-
10.1063/1.103584
-
R. H. Bube, L. Echeverria, and D. Redfield, Evidence for a stretched-exponential description of optical defect generation in hydrogenated amorphous silicon., Appl. Phys. Lett. 57, 79 (1990). 10.1063/1.103584
-
(1990)
Appl. Phys. Lett.
, vol.57
, pp. 79
-
-
Bube, R.H.1
Echeverria, L.2
Redfield, D.3
-
21
-
-
77958044304
-
Persistent photoconductivity in HfInZnO thin film transistors
-
10.1063/1.3496029
-
K. Ghaffarzadeh, A. Nathan, J. Robertson, S. Kim, S. Jeon, C. Kim, U.-I. Chung, and J.-H. Lee, Persistent photoconductivity in HfInZnO thin film transistors., Appl. Phys. Lett. 97, 143510 (2010). 10.1063/1.3496029
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 143510
-
-
Ghaffarzadeh, K.1
Nathan, A.2
Robertson, J.3
Kim, S.4
Jeon, S.5
Kim, C.6
Chung, U.-I.7
Lee, J.-H.8
-
22
-
-
0000488580
-
Persistent photoconductivity in poly(p-phenylenevinylene): Spectral response and slow relaxation
-
10.1103/PhysRevB.47.15543
-
C. Lee, G. Yu, and A. Heeger, Persistent photoconductivity in poly(p-phenylenevinylene): Spectral response and slow relaxation., Phys. Rev. B 47, 15543-15553 (1993). 10.1103/PhysRevB.47.15543
-
(1993)
Phys. Rev. B
, vol.47
, pp. 15543-15553
-
-
Lee, C.1
Yu, G.2
Heeger, A.3
-
23
-
-
0031124281
-
Deep levels and persistent photoconductivity in GaN thin films
-
10.1063/1.118799
-
C. H. Qiu and J. I. Pankove, Deep levels and persistent photoconductivity in GaN thin films., Appl. Phys. Lett. 70, 1983 (1997). 10.1063/1.118799
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 1983
-
-
Qiu, C.H.1
Pankove, J.I.2
-
24
-
-
0000303934
-
Optical and electrical properties of undoped ZnO films grown by spray pyrolysis of zinc nitrate solution
-
10.1063/1.366944
-
S. A. Studenikin, N. Golego, and M. Cocivera, Optical and electrical properties of undoped ZnO films grown by spray pyrolysis of zinc nitrate solution., J. Appl. Phys. 83, 2104 (1998). 10.1063/1.366944
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 2104
-
-
Studenikin, S.A.1
Golego, N.2
Cocivera, M.3
-
25
-
-
33749233582
-
Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
-
10.1103/PhysRevB.72.035215
-
S. Lany and A. Zunger, Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors., Phys. Rev. B 72, 1-13 (2005). 10.1103/PhysRevB.72.035215
-
(2005)
Phys. Rev. B
, vol.72
, pp. 1-13
-
-
Lany, S.1
Zunger, A.2
-
26
-
-
84884305936
-
-
INVLAP.M: A MATLAB function for numerical inversion of Laplace transforms by the de Hoog algorithm, Department of Hydrodynamics and Water Resources, Technical University of Denmark
-
K. J. Hollenbeck, INVLAP.M: A MATLAB function for numerical inversion of Laplace transforms by the de Hoog algorithm, Department of Hydrodynamics and Water Resources, Technical University of Denmark (1998).
-
(1998)
-
-
Hollenbeck, K.J.1
-
27
-
-
36749113329
-
Deep-level spectroscopy in high-resistivity materials
-
10.1063/1.89929
-
Ch. Hurtes, M. Boulou, A. Mitonneau, and D. Bois, Deep-level spectroscopy in high-resistivity materials., Appl. Phys. Lett. 32, 821 (1978). 10.1063/1.89929
-
(1978)
Appl. Phys. Lett.
, vol.32
, pp. 821
-
-
Hurtes, Ch.1
Boulou, M.2
Mitonneau, A.3
Bois, D.4
-
29
-
-
0016081559
-
Deep-level transient spectroscopy: A new method to characterize traps in semiconductors
-
10.1063/1.1663719
-
D. V. Lang, Deep-level transient spectroscopy: A new method to characterize traps in semiconductors., J. Appl. Phys. 45, 3023 (1974). 10.1063/1.1663719
-
(1974)
J. Appl. Phys.
, vol.45
, pp. 3023
-
-
Lang, D.V.1
-
30
-
-
0016931568
-
Determination of deep levels in Cu-doped GaP using transient-current spectroscopy
-
10.1063/1.322695
-
B. W. Wessels, Determination of deep levels in Cu-doped GaP using transient-current spectroscopy., J. Appl. Phys. 47, 1311 (1976). 10.1063/1.322695
-
(1976)
J. Appl. Phys.
, vol.47
, pp. 1311
-
-
Wessels, B.W.1
-
31
-
-
0022676098
-
Multi-exponential analysis of DLTS
-
10.1007/BF00620735
-
J. Morimoto, T. Kida, Y. Miki, and T. Miyakawa, Multi-exponential analysis of DLTS., Appl. Phys. A 39, 197-202 (1986). 10.1007/BF00620735
-
(1986)
Appl. Phys. A
, vol.39
, pp. 197-202
-
-
Morimoto, J.1
Kida, T.2
Miki, Y.3
Miyakawa, T.4
-
32
-
-
0025438945
-
Direct analysis of the photocurrent transient in semi-insulating GaAs
-
10.1016/0038-1098(90)90459-O
-
M. J. Brasil and P. Motisuke, Direct analysis of the photocurrent transient in semi-insulating GaAs., Solid State Commun. 74, 935-939 (1990). 10.1016/0038-1098(90)90459-O
-
(1990)
Solid State Commun.
, vol.74
, pp. 935-939
-
-
Brasil, M.J.1
Motisuke, P.2
-
33
-
-
0042208665
-
Analysis of photoinduced current transient spectroscopy (PICTS) data by a regularization method
-
10.1088/0953-8984/4/28/014
-
C. Eiche, D. Maier, M. Schneider, D. Sinerius, J. Weese, K. W. Benz, and J. Honerkamp, Analysis of photoinduced current transient spectroscopy (PICTS) data by a regularization method., J. Phys.: Condens. Matter 4, 6131-6140 (1992). 10.1088/0953-8984/4/28/014
-
(1992)
J. Phys.: Condens. Matter
, vol.4
, pp. 6131-6140
-
-
Eiche, C.1
Maier, D.2
Schneider, M.3
Sinerius, D.4
Weese, J.5
Benz, K.W.6
Honerkamp, J.7
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