High responsivity of amorphous indium gallium zinc oxide phototransistor with Ta2O5 gate dielectric

Applied Physics Letters

Volumn 101, Issue 26, 2012, Pages

  Chang, T H ^a   Chiu, C J ^a   Weng, W Y ^a   Chang, S J ^a   Tsai, T Y ^a   Huang, Z D ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PERFORMANCE; GATE BIAS; INDIUM GALLIUM ZINC OXIDES; MONOCHROMATIC ILLUMINATION; OPTICAL CHARACTERISTICS; OXYGEN CONTENT; OXYGEN PARTIAL PRESSURE; RESPONSIVITY; THIN-FILM TRANSISTOR (TFTS);

AMORPHOUS SEMICONDUCTORS; PARTIAL PRESSURE; PHOTOTRANSISTORS; TANTALUM OXIDES; THIN FILM TRANSISTORS;

GATE DIELECTRICS;

EID: 84871764971     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773307     Document Type: Article

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