Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

Nature Materials

Volumn 11, Issue 4, 2012, Pages 301-305

  Jeon, Sanghun ^a   Ahn, Seung Eon ^a   Song, Ihun ^a   Kim, Chang Jung ^a   Chung, U In ^a   Lee, Eunha ^a   Yoo, Inkyung ^a   Nathan, Arokia ^b   Lee, Sungsik ^c   Robertson, John ^b   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; OPTICAL SENSORS; OXYGEN VACANCIES; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; THIN FILM TRANSISTORS; THIN FILMS;

AMORPHOUS OXIDE SEMICONDUCTOR (AOS); ELECTRON ACCUMULATION; HIGH FRAME RATE; INTERACTIVE DISPLAY; OPTICAL TRANSPARENCY; PERSISTENT PHOTOCONDUCTIVITY; SHORTER WAVELENGTH; THREE-TERMINAL DEVICES;

OXIDE SEMICONDUCTORS;

EID: 84862818967     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat3256     Document Type: Article

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