High-responsivity and high-sensitivity graphene dots/a-IGZO thin-film phototransistor

IEEE Electron Device Letters

Volumn 36, Issue 1, 2015, Pages 44-46

  Pei, Zingway ^a   Lai, Hsin Cheng ^a   Wang, Jian Yu ^a   Chiang, Wei Hung ^b   Chen, Chien Hsun ^c  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

a IGZO; Graphene dot; Phototransistor; Responsivity

Indexed keywords

PHOTOTRANSISTORS; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILMS;

A-IGZO; ABSORPTION LAYER; DARK CURRENT RATIO; HIGH SENSITIVITY; LIGHT ILLUMINATION; PHOTO DETECTION; RESPONSIVITY; TRANSISTOR GAIN;

GRAPHENE;

EID: 84920190091     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2368773     Document Type: Article

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