Enhanced photosensitivity of InGaZnO-TFT with a CuPc light absorption layer

Superlattices and Microstructures

Volumn 51, Issue 4, 2012, Pages 538-543

  Li, Jun ^a,b   Zhou, Fan ^a   Lin, Hua Ping ^a   Zhu, Wen Qing ^a,b   Zhang, Jian Hua ^b   Jiang, Xue Yin ^a   Zhang, Zhi Lin ^a,b  

^a SHANGHAI UNIVERSITY   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

CuPc; InGaZnO; Photosensitivity; Transistor

Indexed keywords

COPPER PHTHALOCYANINE; CUPC; GATE-SOURCE VOLTAGE; INDIUM GALLIUM ZINC OXIDES (IGZO); INGAZNO; P-N JUNCTION; RESPONSIVITY; THIN FILM TRANSISTORS (TFT); WHITE-LIGHT ILLUMINATION;

FIELD EFFECT TRANSISTORS; GALLIUM; LIGHT SENSITIVE MATERIALS; PHOTOSENSITIVITY; SEMICONDUCTOR JUNCTIONS; THIN FILM TRANSISTORS; TRANSISTORS;

LIGHT ABSORPTION;

EID: 84862817595     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2012.02.002     Document Type: Article

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