Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer

Applied Physics Letters

Volumn 97, Issue 20, 2010, Pages

  Zan, Hsiao Wen ^a   Chen, Wei Tsung ^a   Hsueh, Hsiu Wen ^a   Kao, Shih Chin ^a   Ku, Ming Che ^a   Tsai, Chuang Chuang ^a   Meng, Hsin Fei ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BODY VOLTAGE; CAPPING LAYER; HYSTERESIS BEHAVIOR; NARROW BANDS; P-N JUNCTION; PN JUNCTION DIODES; VISIBLE LIGHT; WIDE BAND GAP;

AMORPHOUS FILMS; GALLIUM; PHOTOTRANSISTORS; POLYMERIC FILMS; POLYMERS; SEMICONDUCTOR JUNCTIONS; THIN FILM TRANSISTORS; ZINC;

INDIUM;

EID: 78649250229     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3517506     Document Type: Article

References (8)

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