Black phosphorus-zinc oxide nanomaterial heterojunction for p-n diode and junction field-effect transistor

Nano Letters

Volumn 16, Issue 2, 2016, Pages 1293-1298

  Jeon, Pyo Jin ^a   Lee, Young Tack ^b   Lim, June Yeong ^a   Kim, Jin Sung ^a   Hwang, Do Kyung ^b,c   Im, Seongil ^a  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c University of Science and Technology (UST)   (South Korea)

Author keywords

Black phosphorus; heterojunction; junction field effect transistor; p n diode; zinc oxide nanowire

Indexed keywords

DIODES; ELECTRIC RECTIFIERS; ENERGY GAP; HETEROJUNCTIONS; NANOSHEETS; NANOSTRUCTURED MATERIALS; NANOWIRES; PHOSPHORUS; RECONFIGURABLE HARDWARE; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS; VAN DER WAALS FORCES; ZINC; ZINC OXIDE;

ELECTRONIC APPLICATION; JUNCTION FIELD EFFECT TRANSISTORS; JUNCTION FIELD-EFFECT TRANSISTORS (JFETS); MECHANICAL FLEXIBILITY; P-N DIODE; TWO DIMENSIONAL (2 D); ZINC OXIDE NANOMATERIALS; ZINC OXIDE NANOWIRES;

FIELD EFFECT TRANSISTORS;

EID: 84958231478     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b04664     Document Type: Article

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