Thin-layer black phosphorous/GaAs heterojunction p-n diodes

Applied Physics Letters

Volumn 106, Issue 23, 2015, Pages

  Gehring, Pascal ^a   Urcuyo, Roberto ^a   Duong, Dinh Loc ^a   Burghard, Marko ^a   Kern, Klaus ^a,b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; DOPING (ADDITIVES); ENERGY GAP; INTERFACES (MATERIALS); OPEN CIRCUIT VOLTAGE; OPTOELECTRONIC DEVICES; PHOSPHORUS; QUALITY CONTROL; SEMICONDUCTOR DIODES;

DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; DIRECT BAND GAP; EXTERNAL QUANTUM EFFICIENCY; GAAS SUBSTRATES; HIGH CARRIER MOBILITY; P-N HETEROJUNCTIONS; STRUCTURAL QUALITIES;

HETEROJUNCTIONS;

EID: 84935859623     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4922531     Document Type: Article

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