Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer

ACS Nano

Volumn 9, Issue 10, 2015, Pages 10394-10401

  Lee, Young Tack ^a   Kwon, Hyeokjae ^b   Kim, Jin Sung ^b   Kim, Hong Hee ^a   Lee, Yun Jae ^a   Lim, Jung Ah ^a   Song, Yong Won ^a   Yi, Yeonjin ^b   Choi, Won Kook ^a,c   Hwang, Do Kyung ^a,c   Im, Seongil ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Yonsei University   (South Korea)

^c University of Science and Technology (UST)   (South Korea)

Author keywords

2D nanosheet transistor; black phosphorus (BP); dual gate transistor; ferroelectric memory CMOS; MoS2; P(VDF TrFE)

Indexed keywords

CARBON; ELECTRIC INVERTERS; ENERGY GAP; FERROELECTRIC DEVICES; FERROELECTRICITY; MOLYBDENUM COMPOUNDS; NANOSHEETS; PHOSPHORUS; TRANSISTORS; VAN DER WAALS FORCES;

BLACK PHOSPHORUS (BP); DUAL GATES; FERROELECTRIC MEMORY; FERROELECTRIC TRANSISTORS; NON-VOLATILE FERROELECTRIC MEMORY; NON-VOLATILE MEMORY TRANSISTORS; OPTOELECTRONIC APPLICATIONS; PVDF-TRFE;

FIELD EFFECT TRANSISTORS;

EID: 84945900244     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b04592     Document Type: Article

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