Polarization-sensitive broadband photodetector using a black phosphorus vertical p-n junction

Nature Nanotechnology

Volumn 10, Issue 8, 2015, Pages 707-713

  Yuan, Hongtao ^a,b   Liu, Xiaoge ^a   Afshinmanesh, Farzaneh ^a   Li, Wei ^a   Xu, Gang ^a   Sun, Jie ^a   Lian, Biao ^a   Curto, Alberto G ^a   Ye, Guojun ^c,d   Hikita, Yasuyuki ^a,b   Shen, Zhixun ^a,b   Zhang, Shou Cheng ^a,b   Chen, Xianhui ^c,d,e   Brongersma, Mark ^a,b   Hwang, Harold Y ^a,b   Cui, Yi ^a,b  

^a STANFORD UNIVERSITY   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^d INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^e NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DICHROISM; ELECTRIC FIELDS; OPTOELECTRONIC DEVICES; PHOSPHORUS; PHOTONS; POLARIZATION; SEMICONDUCTOR JUNCTIONS;

BUILT-IN ELECTRIC FIELDS; LAYERED CRYSTALS; OPTOELECTRONIC APPLICATIONS; PHOTOGENERATED ELECTRONS; POLARIZATION SENSITIVE; POLARIZATION SENSITIVITY; RECOMBINATION RATE; TRANSISTOR GEOMETRIES;

PHOTODETECTORS;

GRAPHENE; PHOSPHORUS;

ANISOTROPY; ARTICLE; CALCULATION; CRYSTAL; ELECTRIC FIELD; ELECTRON; GEOMETRY; LINEAR DICHROISM; PHOTOTRANSISTOR; POLARIZATION; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 84938741763     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2015.112     Document Type: Article

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