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Volumn 97, Issue 12, 2010, Pages

ZnO nanowire and mesowire for logic inverter fabrication

Author keywords

[No Author keywords available]

Indexed keywords

NEGATIVE V; SUPPLY VOLTAGES; TOP-GATE; VOLTAGE GAIN; ZNO; ZNO NANOWIRES;

EID: 77957148763     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3492837     Document Type: Article
Times cited : (20)

References (20)
  • 1
    • 0035902938 scopus 로고    scopus 로고
    • Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species
    • DOI 10.1126/science.1062711
    • Y. Cui, Q. Wei, H. Park, and C. M. Lieber, Science SCIEAS 0036-8075 293, 1289 (2001). 10.1126/science.1062711 (Pubitemid 32777412)
    • (2001) Science , vol.293 , Issue.5533 , pp. 1289-1292
    • Cui, Y.1    Wei, Q.2    Park, H.3    Lieber, C.M.4
  • 3
    • 44949114116 scopus 로고    scopus 로고
    • 3 gate layers
    • DOI 10.1088/0957-4484/19/26/265202, PII S0957448408715873
    • D. Yeom, J. Kang, M. Lee, J. Jang, J. Yun, D. -Y. Jeong, C. Yoon, J. Koo, and S. Kim, Nanotechnology NNOTER 0957-4484 19, 265202 (2008). 10.1088/0957-4484/19/26/265202 (Pubitemid 351813723)
    • (2008) Nanotechnology , vol.19 , Issue.26 , pp. 265202
    • Yeom, D.1    Keem, K.2    Kang, J.3    Jeong, D.-Y.4    Yoon, C.5    Kim, D.6    Kim, S.7
  • 5
    • 36749036660 scopus 로고    scopus 로고
    • High-performance logic circuits constructed on single CdS nanowires
    • DOI 10.1021/nl0715286
    • R. -M. Ma, L. Dai, H. -B. Huo, W. -J. Xu, and G. G. Qin, Nano Lett. NALEFD 1530-6984 7, 3300 (2007). 10.1021/nl0715286 (Pubitemid 350216020)
    • (2007) Nano Letters , vol.7 , Issue.11 , pp. 3300-3304
    • Ma, R.-M.1    Dai, L.2    Huo, H.-B.3    Xu, W.-J.4    Qin, G.G.5
  • 8
    • 17044428578 scopus 로고    scopus 로고
    • Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors
    • DOI 10.1063/1.1821648
    • W. I. Park, J. S. Kim, M. H. Bae, H. -J. Lee, and G. -C. Yi, Appl. Phys. Lett. APPLAB 0003-6951 85, 5052 (2004). 10.1063/1.1821648 (Pubitemid 40715211)
    • (2004) Applied Physics Letters , vol.85 , Issue.21 , pp. 5052-5054
    • Park, W.I.1    Kim, J.S.2    Yi, G.-C.3    Bae, M.H.4    Lee, H.-J.5
  • 13
    • 33746864879 scopus 로고    scopus 로고
    • Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors
    • DOI 10.1021/nl060708x
    • K. Keem, D. -Y. Jeong, M. -S. Lee, I. -S. Yeo, U. -I. Chung, J. -T. Moon, and S. Kim, Nano Lett. NALEFD 1530-6984 6, 1454 (2006). 10.1021/nl060708x (Pubitemid 44195327)
    • (2006) Nano Letters , vol.6 , Issue.7 , pp. 1454-1458
    • Keem, K.1    Jeong, D.-Y.2    Kim, S.3    Lee, M.-S.4    Yeo, I.-S.5    Chung, U.-I.6    Moon, J.-T.7
  • 20
    • 33745327664 scopus 로고    scopus 로고
    • Ge/Si nanowire heterostructures as high-performance field-effect transistors
    • DOI 10.1038/nature04796, PII NATURE04796
    • J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan, and C. M. Lieber, Nature (London) NATUAS 0028-0836 441, 489 (2006). 10.1038/nature04796 (Pubitemid 44050147)
    • (2006) Nature , vol.441 , Issue.7092 , pp. 489-493
    • Xiang, J.1    Lu, W.2    Hu, Y.3    Wu, Y.4    Yan, H.5    Lieber, C.M.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.