Transport properties of a MoS2/WSe2 heterojunction transistor and its potential for application

Nano Letters

Volumn 16, Issue 2, 2016, Pages 1359-1366

  Nourbakhsh, Amirhasan ^a   Zubair, Ahmad ^a   Dresselhaus, Mildred S ^a   Palacios, Tomás ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

band to band tunneling; heterojunction transistor; multivalued logic; negative differential resistance; Transition metal dichalcogenide

Indexed keywords

COMPUTER CIRCUITS; DIODES; MANY VALUED LOGICS; MOLYBDENUM COMPOUNDS; NEGATIVE RESISTANCE; RECONFIGURABLE HARDWARE; SEMICONDUCTOR DIODES; TRANSCONDUCTANCE; TRANSISTOR TRANSISTOR LOGIC CIRCUITS; TRANSISTORS; TRANSITION METALS; TUNNEL DIODES; VAN DER WAALS FORCES;

BAND TO BAND TUNNELING; DIODE CHARACTERISTICS; HETEROJUNCTION DIODES; HETEROJUNCTION TRANSISTORS; INTERLAYER COUPLING; NEGATIVE DIFFERENTIAL RESISTANCES; NEGATIVE TRANSCONDUCTANCE; TRANSITION METAL DICHALCOGENIDES;

HETEROJUNCTIONS;

EID: 84958190848     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b04791     Document Type: Article

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