Sub-micron area heterojunction backward diode millimeter-wave detectors with 0.18 pW/Hz1/2 noise equivalent power

IEEE Microwave and Wireless Components Letters

Volumn 21, Issue 5, 2011, Pages 267-269

  Zhang, Ze ^a   Rajavel, Rajesh ^b   Deelman, Peter ^b   Fay, Patrick ^a  

^a University of Notre Dame   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

Backward tunnel diode; millimeter wave detector; Sb heterostructure tunnel diode

Indexed keywords

ACTIVE AREA; ANODE COMPOSITION; BACKWARD DIODES; BACKWARD TUNNEL DIODE; BARRIER LAYERS; DIRECT DETECTORS; HETEROSTRUCTURES; HIGH SENSITIVITY; INAS; JUNCTION RESISTANCES; LOW NOISE; MATCHING CONDITION; MILLIMETER-WAVE DETECTORS; MILLIMETER-WAVE IMAGING; NOISE EQUIVALENT POWER; ON-WAFER; S PARAMETERS; SB-HETEROSTRUCTURE TUNNEL DIODE; SENSITIVITY MEASUREMENT; SUBMICRON;

CUTOFF FREQUENCY; DC POWER TRANSMISSION; DETECTORS; DIODES; MILLIMETER WAVES; SCATTERING PARAMETERS; TUNNEL DIODES;

HETEROJUNCTIONS;

EID: 79955945171     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2011.2123878     Document Type: Article

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