Monolayer semiconductor nanocavity lasers with ultralow thresholds

Nature

Volumn 520, Issue 7545, 2015, Pages 69-72

  Wu, Sanfeng ^a   Buckley, Sonia ^b   Schaibley, John R ^a   Feng, Liefeng ^a   Yan, Jiaqiang ^c,d   Mandrus, David G ^c,d,e   Hatami, Fariba ^f   Yao, Wang ^g   Vučković, Jelena ^b   Majumdar, Arka ^h   Xu, Xiaodong ^a  

^a UNIVERSITY OF WASHINGTON   (United States)

^b STANFORD UNIVERSITY   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

^d University of Tennessee   (United States)

^e UNIVERSITY OF TENNESSEE   (United States)

^f HUMBOLDT UNIVERSITY   (Germany)

^g UNIVERSITY OF HONG KONG   (Hong Kong)

^h University of Washington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIN; QUANTUM DOT; TUNGSTEN;

CRYSTAL STRUCTURE; ELECTROMAGNETIC FIELD; GEOMETRY; NANOTECHNOLOGY; OPTICAL METHOD; QUANTUM MECHANICS;

ARTICLE; CONTROLLED STUDY; CRYSTAL; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT; GEOMETRY; LASER; NANOFABRICATION; NANOLASER; OPTICS; PHOTON; PHOTONIC CRYSTAL CAVITY; PRIORITY JOURNAL; SEMICONDUCTOR; STATIC ELECTRICITY; SURFACE PROPERTY;

EID: 84926328739     PISSN: 00280836     EISSN: 14764687     Source Type: Journal    
DOI: 10.1038/nature14290     Document Type: Article

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