Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET

IEEE Electron Device Letters

Volumn 36, Issue 4, 2015, Pages 405-407

  Kang, Sangwoo ^a   Fallahazad, Babak ^a   Lee, Kayoung ^a   Movva, Hema ^a   Kim, Kyounghwan ^a   Corbet, Chris M ^a   Taniguchi, Takashi ^b   Watanabe, Kenji ^b   Colombo, Luigi ^c   Register, Leonard F ^a   Tutuc, Emanuel ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

bilayer graphene; negative differential resistance; tunneling field effect transistor

Indexed keywords

BORON NITRIDE; GRAPHENE; NEGATIVE RESISTANCE; NITRIDES;

BILAYER GRAPHENE; DEVICE CHARACTERISTICS; ELECTROSTATIC POTENTIALS; HEXAGONAL BORON NITRIDE; NEGATIVE DIFFERENTIAL RESISTANCES; ROOM-TEMPERATURE OPERATION; TUNNELING FIELD-EFFECT TRANSISTORS; TUNNELING RESONANCES;

FIELD EFFECT TRANSISTORS;

EID: 84961290597     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2015.2398737     Document Type: Article

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