15-nm channel length MoS2 FETs with single- and double-gate structures

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2015-August, Issue , 2015, Pages T28-T29

  Nourbakhsh, A ^a,b   Zubair, A ^a   Huang, S ^a   Ling, X ^a   Dresselhaus, M S ^a   Kong, J ^a   De Gendt, S ^b,c   Palacios, T ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

MOLYBDENUM COMPOUNDS; MONOLAYERS;

CHANNEL LENGTH; DOUBLE-GATE STRUCTURES; FIELD EFFECT TRANSISTOR (FETS); HIGH QUALITY; SOURCE-DRAIN; SUBTHRESHOLD SWING;

FIELD EFFECT TRANSISTORS;

EID: 84951083292     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2015.7223690     Document Type: Conference Paper

References (7)

1. B. Radisavljevic, et al., Nat. Nano. Vol. 6, no. 3, p 147, 2011
2. W. Cao et al., IEDM 2014
3. Y. Yoon et al., Nano Lett., p. 3768, 2011
4. W. Zhu et al., Nat. Comm 5, 3087, 2014
5. L. Yu, et al., Nano Lett. 14, 3055, 2014
6. A. Nourbakhsh et al., Nanotechnology, 21, 435203, 2010
7. J. Kang et al., APL., 104, 09319=06, 2014