Band-edge steepness obtained from esaki/backward diode current-voltage characteristics

IEEE Transactions on Electron Devices

Volumn 61, Issue 5, 2014, Pages 1488-1493

  Agarwal, Sapan ^a   Yablonovitch, Eli ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Backward diode; Band tails; Density of states; Esaki diode; Subthreshold swing; Tunneling; Tunneling field effect transistor (TFET); Urbach tail

Indexed keywords

DIODES; ELECTRON TUNNELING; ENERGY GAP; FIELD EFFECT TRANSISTORS; SEMICONDUCTOR DOPING; TUNNEL DIODES;

BACKWARD DIODES; BAND TAIL; DENSITY OF STATE; ESAKI DIODE; SUBTHRESHOLD SWING; TUNNELING FIELD-EFFECT TRANSISTORS; URBACH TAIL;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84899624524     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2312731     Document Type: Article

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