Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment

Nano Letters

Volumn 15, Issue 9, 2015, Pages 5791-5798

  Yan, Rusen ^a,b   Fathipour, Sara ^b   Han, Yimo ^a   Song, Bo ^a,b   Xiao, Shudong ^a   Li, Mingda ^a   Ma, Nan ^a   Protasenko, Vladimir ^b   Muller, David A ^a   Jena, Debdeep ^a,b   Xing, Huili Grace ^a,b  

^a Cornell University   (United States)

^b University of Notre Dame   (United States)

Author keywords

black phosphorus (BP); Esaki diode; negative differential resistance (NDR); tin diselenide (SnSe2< inf>); tunneling junction; van der Waals heterojunction

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRON TUNNELING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NEGATIVE RESISTANCE; PHOSPHORUS; SELENIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TEMPERATURE DISTRIBUTION; TIN; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL DIODES; VAN DER WAALS FORCES;

BLACK PHOSPHORUS (BP); DISELENIDE; ESAKI DIODE; NEGATIVE DIFFERENTIAL RESISTANCES; TUNNELING JUNCTIONS; VAN DER WAALS;

HETEROJUNCTIONS;

EID: 84941091425     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b01792     Document Type: Article

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