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Volumn 32, Issue 11, 2011, Pages 1516-1518

Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate

Author keywords

Heterojunction; Indium gallium arsenide; Indium phosphide; MOSFETs; Nanoelectronics; Subthreshold swing (SS); Transistors; Tunnel field effect transistor (TFET); Tunneling

Indexed keywords

COMPOUND SEMICONDUCTORS; GAAS; INDIUM GALLIUM ARSENIDE; INGAAS/INP; INP; INTERBAND TUNNELING; MOSFETS; N-CHANNEL; NEGATIVE DIFFERENTIAL RESISTANCES; ON-CURRENTS; POST DEPOSITION ANNEALING; SUBTHRESHOLD SWING; TRANSPORT MECHANISM; TUNNEL FET;

EID: 80054968118     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2164232     Document Type: Article
Times cited : (58)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.