Engineering the electron-hole bilayer tunneling field-effect transistor

IEEE Transactions on Electron Devices

Volumn 61, Issue 5, 2014, Pages 1599-1606

  Agarwal, Sapan ^a   Teherani, James T ^b   Hoyt, Judy L ^b   Antoniadis, Dimitri A ^b   Yablonovitch, Eli ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Electron hole (EH) bilayer; Quantization; Semiconductor device modeling; Tunneling; Tunneling field effect transistor (TFET)

Indexed keywords

EFFICIENCY; ELECTRON TUNNELING; GERMANIUM; OPTIMIZATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICON;

ELECTRON-HOLE BILAYERS; GATE EFFICIENCY; OPTIMAL DEVICES; QUANTIZATION; SUBTHRESHOLD SWING; TRANSISTOR OPERATION; TUNNELING FIELD-EFFECT TRANSISTORS; WORK-FUNCTION DIFFERENCE;

FIELD EFFECT TRANSISTORS;

EID: 84899945703     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2312939     Document Type: Article

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