Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation

Nano Letters

Volumn 15, Issue 8, 2015, Pages 5052-5058

  He, G ^a   Ghosh, K ^a   Singisetti, U ^a   Ramamoorthy, H ^a   Somphonsane, R ^b   Bohra, G ^a   Matsunaga, M ^c   Higuchi, A ^c   Aoki, N ^c   Najmaei, S ^d   Gong, Y ^d   Zhang, X ^d   Vajtai, R ^d   Ajayan, P M ^d   Bird, J P ^a  

^a State University of New York   (United States)

^b KING MONGKUT'S INSTITUTE OF TECHNOLOGY LADKRABANG   (Thailand)

^c CHIBA UNIVERSITY   (Japan)

^d Rice University   (United States)

Author keywords

2D transistors; high field transport; Molybdenum disulfide; transition metal dichalcogenides; velocity saturation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; LAYERED SEMICONDUCTORS; MONOLAYERS; SULFUR COMPOUNDS; TRANSISTORS; TRANSITION METALS;

CONDUCTION MECHANISM; HIGH FIELD TRANSPORT; MOLYBDENUM DISULFIDE; REPLACEMENT MATERIALS; TRANSITION METAL DICHALCOGENIDES; TRANSPORT PHENOMENA; VARIABLE RANGE HOPPING; VELOCITY SATURATION;

MOLYBDENUM COMPOUNDS;

DISULFIDE; MOLYBDENUM; MOLYBDENUM DISULFIDE;

CHEMICAL STRUCTURE; CHEMISTRY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; TRANSISTOR;

CRYSTALLIZATION; DISULFIDES; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; MODELS, MOLECULAR; MOLYBDENUM; TRANSISTORS, ELECTRONIC;

EID: 84939247397     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b01159     Document Type: Article

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