On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals

Applied Physics Letters

Volumn 104, Issue 11, 2014, Pages

  Chang, Hsiao Yu ^a   Zhu, Weinan ^a   Akinwande, Deji ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC CRYSTALS; CONDUCTANCE MEASUREMENT; FIELD-EFFECT DEVICES; LOW DENSITY; LOW FIELD MOBILITY; MOBILITY EXTRACTION; SCHOTTKY BARRIERS; TRANSFER LENGTH METHODS;

CONTACT RESISTANCE; MOLYBDENUM COMPOUNDS; TWO DIMENSIONAL;

FUNCTION EVALUATION;

EID: 84897909662     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4868536     Document Type: Article

References (22)

1. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, Nat. Nanotechnol. 7 (11), 699-712 (2012). 10.1038/nnano.2012.193
2. V. Podzorov, M. E. Gershenson, C. Kloc, R. Zeis, and E. Bucher, Appl. Phys. Lett. 84 (17), 3301-3303 (2004). 10.1063/1.1723695
3. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6 (3), 147-150 (2011). 10.1038/nnano.2010.279
4. H. Fang, S. Chuang, T. C. Chang, K. Takei, T. Takahashi, and A. Javey, Nano Lett. 12 (7), 3788-3792 (2012). 10.1021/nl301702r
5. P. Johari and V. B. Shenoy, ACS Nano 6 (6), 5449-5456 (2012). 10.1021/nn301320r
6. H. Wang, L. Yu, Y.-H. Lee, Y. Shi, A. Hsu, M. L. Chin, L.-J. Li, M. Dubey, J. Kong, and T. Palacios, Nano Lett. 12 (9), 4674-4680 (2012). 10.1021/nl302015v
7. S. Kim, A. Konar, W.-S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J.-B. Yoo, J.-Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, Nat. Commun. 3, 1011 (2012). 10.1038/ncomms2018
8. H.-Y. Chang, S. Yang, J. Lee, L. Tao, W.-S. Hwang, D. Jena, N. Lu, and D. Akinwande, ACS Nano 7 (6), 5446-5452 (2013). 10.1021/nn401429w
9. M. S. Fuhrer and J. Hone, Nat. Nanotechnol. 8 (3), 146-147 (2013). 10.1038/nnano.2013.30
10. S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, Nano Lett. 13, 100 (2013). 10.1021/nl303583v
11. W. Liu, J. Kang, D. Sarkar, Y. Khatami, D. Jena, and K. Banerjee, Nano Lett. 13 (5), 1983-1990 (2013). 10.1021/nl304777e
12. F. Xia, V. Perebeinos, Y.-m. Lin, Y. Wu, and P. Avouris, Nat. Nanotechnol. 6 (3), 179-184 (2011). 10.1038/nnano.2011.6
13. K. N. Parrish and D. Akinwande, Appl. Phys. Lett. 98 (18), 183505 (2011). 10.1063/1.3582613
14. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and P. Avouris, Appl. Phys. Lett. 73 (17), 2447-2449 (1998). 10.1063/1.122477
15. G. Ghibaudo, Electron. Lett. 24 (9), 543-545 (1988). 10.1049/el:19880369
16. S. Das and J. Appenzeller, Nano Lett. 13 (7), 3396-3402 (2013). 10.1021/nl401831u
17. J.-R. Chen, P. M. Odenthal, A. Swartz, G. C. Floyd, H. Wen, K. Y. Luo, and R. K. Kawakami, Nano Lett. 13, 3106-3110 (2013) 10.1021/nl4010157.
18. H. Liu, A. T. Neal, and P. D. Ye, ACS Nano 6, 8563-8569 (2012) 10.1021/nn303513c.
19. S. Larentis, B. Fallahazad, and E. Tutuc, Appl. Phys. Lett. 101 (22), 223104 (2012). 10.1063/1.4768218
20. D. K. Schroder, Semiconductor Material and Device Characterization (John Wiley & Sons, 2006).
21. G. Reichert and T. Ouisse, IEEE Trans. Electron Devices 43 (9), 1394-1398 (1996). 10.1109/16.535324
22. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (John Wiley & Sons, 2006).