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Volumn 104, Issue 20, 2014, Pages

Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors

(8) Amani, Matin a Chin, Matthew L a Mazzoni, Alexander L a Burke, Robert A a Najmaei, Sina b Ajayan, Pulickel M b Lou, Jun b Dubey, Madan a

a U S ARMY RESEARCH LABORATORY (United States)

b Rice University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; SUBSTRATES;

CHEMICAL VAPOR DEPOSITIONS (CVD); ELECTRICAL MEASUREMENT; ELECTRONIC TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTOR (FETS); FIELD-EFFECT MOBILITIES; HIGH-TEMPERATURE GROWTH; PERFORMANCE DEGRADATION; RESIDUAL TENSILE STRAIN;

MOLYBDENUM COMPOUNDS;

EID: 84901462865 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4873680 Document Type: Article

Times cited : (116)

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