Strong photoluminescence enhancement of MoS2 through defect engineering and oxygen bonding

ACS Nano

Volumn 8, Issue 6, 2014, Pages 5738-5745

  Nan, Haiyan ^a   Wang, Zilu ^a   Wang, Wenhui ^a   Liang, Zheng ^b   Lu, Yan ^c   Chen, Qian ^a   He, Daowei ^d   Tan, Pingheng ^c   Miao, Feng ^d   Wang, Xinran ^d   Wang, Jinlan ^a   Ni, Zhenhua ^a  

^a SOUTHEAST UNIVERSITY   (China)

^b Graphene Research and Characterization Center   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

^d NANJING UNIVERSITY   (China)

Author keywords

defect engineering; excitons; oxygen bonding; photoluminescence; plasma

Indexed keywords

BINDING ENERGY; CHEMICAL BONDS; CRACKS; EXCITONS; MOLYBDENUM COMPOUNDS; OPTOELECTRONIC DEVICES; OXYGEN; PHOTOLUMINESCENCE; PLASMAS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; X RAY PHOTOELECTRON SPECTROSCOPY;

DEFECT ENGINEERING; FIRST PRINCIPLE CALCULATIONS; HIGH-TEMPERATURE ANNEALING; NON-RADIATIVE RECOMBINATIONS; OXYGEN BONDING; PHOTOLUMINESCENCE ENHANCEMENT; TWO-DIMENSIONAL SEMICONDUCTORS;

GAS ADSORPTION;

EID: 84903486541     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn500532f     Document Type: Article

References (46)

1. Zhang, Y.; Tang, T. T.; Girit, C.; Hao, Z.; Martin, M. C.; Zettl, A.; Crommie, M. F.; Shen, Y. R.; Wang, F. Direct Observation of a Widely Tunable Bandgap in Bilayer Graphene Nature 2009, 459, 820-823
2. Ni, Z. H.; Yu, T.; Luo, Z. Q.; Wang, Y. Y.; Liu, L.; Wong, C. P.; Miao, J. M.; Huang, W.; Shen, Z. X. Probing Charged Impurities in Suspended Graphene Using Raman Spectroscopy ACS Nano 2009, 3, 569-574
3. Yan, W.; He, W. Y.; Chu, Z. D.; Liu, M.; Meng, L.; Dou, R. F.; Zhang, Y. F; Liu, Z. F.; Nie, J. C.; He, L. Strain and Curvature Induced Evolution of Electronic Band Structures in Twisted Graphene Bilayer Nat. Commun. 2013, 4, 3159
4. Xu, Y. N.; Zhan, D.; Liu, L.; Suo, H.; Ni, Z. H.; Nguyen, T. T.; Zhao, C.; Shen, Z. X. Thermal Dynamics of Graphene Edges Investigated by Polarized Raman Spectroscopy ACS Nano 2010, 5, 147-152
5. Ni, Z. H.; Ponomarenko, L. A.; Nair, R. R.; Yang, R.; Anissimova, S.; Grigorieva, I. V.; Schedin, F.; Blake, P.; Shen, Z. X.; Hill, E. H. et al. On Resonant Scatterers as a Factor Limiting Carrier Mobility in Graphene Nano Lett. 2010, 10, 3868-3872
6. Zhan, D.; Yan, J. X.; Lai, L. F.; Ni, Z. H.; Liu, L.; Shen, Z. X. Engineering the Electronic Structure of Graphene Adv. Mater. 2012, 24, 4055-4069
7. 2: A New Direct-Gap Semiconductor Phys. Rev. Lett. 2010, 105, 136805
8. 2 Nano Lett. 2010, 10, 1271-1275
9. 2 Phototransistors ACS Nano 2011, 6, 74-80
10. 2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap Nano Lett. 2012, 12, 3695-3700
11. Feng, J.; Qian, X. F.; Huang, C. W.; Li, J. Strain-Engineered Artificial Atom as a Broad-Spectrum Solar Energy Funnel Nat. Photonics 2012, 6, 866-872
12. 2 Schottky Junctions Sci. Rep. 2013, 3, 1634
13. Bernardi, M.; Palummo, M.; Grossman, J. C. Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials Nano Lett. 2013, 13, 3664-3670
14. 2. arXiv:1305.4235 [cond-mat.mes-hall] 2013, 1305, 4235.
15. 2 by Plasma ACS Nano 2013, 7, 4202-4209
16. 2 Nat. Mater. 2012, 12, 207-211
17. 2 Solid State Commun. 2013, 155, 49-52
18. Tongay, S.; Zhou, J.; Ataca, C.; Liu, J.; Kang, J. S.; Matthews, T. S.; You, L.; Li, J. B.; Grossman, J. C.; Wu, J. Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physi-sorption Gating Nano Lett. 2013, 13, 2831-2836
19. 2 via Chemical Doping Nano Lett. 2013, 13, 5944-5948
20. Qiu, H.; Xu, T.; Wang, Z. L; Ren, W.; Nan, H. Y.; Ni, Z. H.; Chen, Q.; Yuan, S. J.; Miao, F.; Song, F. Q. et al. Hopping Transport through Defect-Induced Localized States in Molybdenum Disulphide Nat. Commun. 2013, 4, 2642
21. Zhou, W.; Zou, X. L.; Najmaei, S.; Liu, Z.; Shi, Y. M.; Kong, J.; Lou, J.; Ajayan, P. M.; Yakobson, B. I.; Idrobo, J. C. Intrinsic Structural Defects in Monolayer Molybdenum Disulfide Nano Lett. 2013, 13, 2615-2622
22. Van der Zande, A. M.; Huang, P. Y.; Chenet, D. A.; Berkelbach, T. C.; You, Y. M.; Lee, G. H.; Heinz, T. F.; Reichman, D. R.; Muller, D. A.; Hone, J. C. Grains and Grain Boundaries in Highly Crystalline Monolayer Molybdenum Disulphide Nat. Mater. 2013, 12, 554-561
23. Komsa, H. P.; Kotakoski, J.; Kurasch, S.; Lehtinen, O.; Kaiser, U.; Krasheninnikov, A. V. Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping Phys. Rev. Lett. 2011, 09, 035503
24. Tongay, S.; Suh, J.; Ataca, C.; Fan, W.; Luce, A.; Kang, J. S.; Liu, J.; Ko, C.; Raghunathanan, R.; Zhou, J.; Ogletree, F. et al. Defects Activated Photoluminescence in Two-Dimensional Semiconductors: Interplay between Bound, Charged, and Free Excitons Sci. Rep. 2013, 3, 2657
25. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150
26. 2 ACS Nano 2010, 4, 2695-2700
27. 2 Revealed by Triply Resonant Raman Scattering Phys. Rev. Lett. 2013, 111, 126801
28. 2 Transistor Phys. Rev. B 2012, 85, 161403
29. 2 Monolayers Small 2013, 8, 1312-1315
30. Gaponenko, M. S.; Lutich, A. A.; Tolstik, N. A.; Onushchenko, A. A.; Malyarevich, A. M.; Petrov, E. P.; Yumashev, K. V. Temperature-Dependent Photoluminescence of PbS Quantum Dots in Glass: Evidence of Exciton State Splitting and Carrier Trapping Phys. Rev. B 2010, 82, 125320
31. Platt, A. D.; Kendrick, M. J.; Loth, M.; Anthony, J. E.; Ostroverkhova, O. Temperature Dependence of Exciton and Charge Carrier Dynamics in Organic Thin Films Phys. Rev. B 2011, 84, 235209
32. Feldmann, J.; Peter, G.; Gobel, E. O.; Dawson, P.; Moore, K.; Foxon, C.; Elliott, R. L. Linewidth Dependence of Radiative Exciton Lifetimes in Quantum Wells Phys. Rev. Lett. 1987, 58, 2337
33. Wirtz, L.; Marini, A.; Rubio, A. Excitons in Boron Nitride Nanotubes: Dimensionality Effects Phys. Rev. Lett. 2006, 96, 126104
34. Wang, S. D.; Chen, Q.; Wang, J. L. Optical Properties of Boron Nitride Nanoribbons: Excitonic Effects Appl. Phys. Lett. 2011, 99, 063114
35. yP Single Quantum Wells Phys. Rev. B 1992, 46, 7280
36. 2 Monolayers Nano Lett. 2013, 13, 3447-3454
37. Mahito, Y.; Theodore, L. E.; Michael, S. F.; William, G. C. Anisotropic Etching of Atomically Thin MoS2 J. Phys. Chem. C 2013, 117, 25643
38. Skolnic, M. S.; Rorison, J. M.; Nash, K. J.; Mowbray, D. J.; Tapster, P. R.; Bass, S. J.; Pitt, A. D. Observation of a Many-Body Edge Singularity in Quantum-Well Luminescence Spectra Phys. Rev. Lett. 1987, 58, 2130
39. 2 Thin Layers on Insulating Substrates Nano Lett. 2012, 12, 1538-1544
40. 2 Following Treatment in an RF-Oxygen Plasma Appl. Surf. Sci. 1998, 134, 11-21 (Pubitemid 128394830)
41. Matioli, E.; Brinkley, S.; Kelchner, K. M.; Hu, Y. L.; Nakamura, S. J.; DenBaars, S.; Speck, J.; Weisbuch, C. High-Brightness Polarized Light-Emitting Diodes Light: Sci. Appl. 2012, 1038, 22
42. Kasim, J.; Yu, T.; You, Y. M.; Liu, J. P.; See, A.; Li, L. J.; Shen, Z. X. Near-Field Raman Imaging Using Optically Trapped Dielectric Microsphere Opt. Exp. 2008, 16, 7976-7984 (Pubitemid 351775007)
43. Román-Pérez, G.; Soler, J. Efficient Implementation of a van der Waals Density Functional: Application to Double-Wall Carbon Nanotubes Phys. Rev. Lett. 2009, 103, 096102
44. Kresse, G.; Furthmuller, J. Efficiency of Ab-Initio Total Energy Calculations for Metals and Semiconductors Using a Plane-Wave Basis Set Comput. Mater. Sci. 1996, 6, 15-51
45. Klimeš, J.; Bowler, D. R.; Michaelides, A. Van der Waals Density Functionals Applied to Solids Phys. Rev. B 2011, 83, 195131
46. Monkhorst, H. J.; Pack, J. D. Special Points for Brillouin-Zone Integrations Phys. Rev. B 1976, 13, 5188-5192