Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures

2D Materials

Volumn 2, Issue 1, 2015, Pages

  Gillgren, Nathaniel ^a   Wickramaratne, Darshana ^b   Shi, Yanmeng ^a   Espiritu, Tim ^a   Yang, Jiawei ^a   Hu, Jin ^c   Wei, Jiang ^c   Liu, Xue ^c   Mao, Zhiqiang ^c   Watanabe, Kenji ^d   Taniguchi, Takashi ^d   Bockrath, Marc ^a   Barlas, Yafis ^a,b   Lake, Roger K ^b   Lau, Chun Ning ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California Riverside   (United States)

^c Tulane University   (United States)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Black phosphorus; Encapsulation; Quantum oscillations

Indexed keywords

ENCAPSULATION; ENERGY GAP; HETEROJUNCTIONS; METAL INSULATOR BOUNDARIES; SEMICONDUCTOR INSULATOR BOUNDARIES;

AMBIPOLAR BEHAVIOR; ELECTRONIC MATERIALS; MAGNETO-OSCILLATION; QUANTUM OSCILLATIONS; SEMICONDUCTOR APPLICATIONS; TRANSPORT MEASUREMENTS; TWO DIMENSIONAL (2 D); VALENCE BAND EDGES;

METAL INSULATOR TRANSITION;

EID: 84947909979     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/2/1/011001     Document Type: Article

References (41)

1. Liu H, Neal A T, Zhu Z, Luo Z, Xu X, TománekDand Ye PD 2014 Phosphorene: An unexplored 2D semiconductor with a high hole mobility ACS Nano 8 4033-41
2. Koenig S P, Doganov RA, Schmidt H, Castro Neto AHand Oezyilmaz B 2014 Electric field effect in ultrathin black phosphorus Appl. Phys. Lett. 104 103106
3. Qiao J, Kong X, Hu Z-X, Yang F and JiW2014 High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus Nat. Commun. 5 4475
4. Rudenko ANand KatsnelsonMI 2014 Quasiparticle band structure and tight-binding model for single-And bilayer black phosphorus Phys. Rev. B 89 201408
5. Xia F, WangHand Jia Y 2014 Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics Nat. Commun. 5 4458
6. ChurchillHOHand Jarillo-Herrero P 2014 Two-dimensional crystals: phosphorus joins the family Nat. Nanotechnology 9 330-1
7. Akahama Y, Endo S and Narita S-I 1983 Electrical properties of black phosphorus single crystals J. Phys. Soc. Japan 52 2148-55
8. Tran V, Soklaski R, Liang Y and Yang L 2014 Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus Phys. Rev. B 89 235319
9. Du Y, Ouyang C, Shi S and LeiM2010 Ab initio studies on atomic and electronic structures of black phosphorus J. Appl. Phys. 107 093718
10. Keyes RW1953 The electrical properties of black phosphorus Phys. Rev. 92 580-4
11. WarschauerD1963 Electrical and optical properties of crystalline black phosphorus J. Appl. Phys. 34 1853-60
12. Maruyama Y, Suzuki S, KobayashiKand Tanuma S 1981 Synthesis and some properties of black phosphorus single crystals Physica B+C 105 99-102
13. LvHY, LuWJ, ShaoDF and Sun Y P 2014 Large thermoelectric power factors in black phosphorus and phosphorene (arXiv:1404.5171)
14. Fei R, Faghaninia A, Soklaski R, Yan J-A, LoCand Yang L 2014 Enhanced thermoelectric efficiency via orthogonal electrical and thermal conductances in phosphorene Nano Lett. 14 6393-9
15. Zhang J, LiuHJ, Cheng L, Wei J, Liang JH, FanDD, Shi J, Tang XF and ZhangQJ 2014 Phosphorene nanoribbon as a promising candidate for thermoelectric applications Sci. Rep. 4 6452
16. Fei R and Yang L 2014 Strain-engineering the anisotropic electrical conductance of few-layer black phosphorus Nano Lett. 14 2884-9
17. Han X, StewartHM, Shevlin SA, CatlowCR A and Guo ZX 2014 Strain and orientation modulated bandgaps and effective masses of phosphorene nanoribbons Nano Lett. 14 4607-14
18. Li L, Yu Y, YeGJ, GeQ, OuX, WuH, Feng D, ChenXHand Zhang Y 2014 Black phosphorus field-effect transistors Nat. Nanotechnology 9 372-7
19. Castellanos-Gomez Aet al 2014 Isolation and characterization of few-layer black phosphorus 2D Mater. 1 025001
20. Favron A, Gaufrès E, Fossard F, Lévesque P L, Phaneuf-L'Heureux A L, TangNY W, Loiseau A, Leonelli R, Francoeur S and Martel R 2014 Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and electronic confinement effects Condens. Matter arXiv: 1408.0345
21. Island JO, SteeleGA, ZantHS J v d and Castellanos-Gomez A 2014 Environmental stability of few-layer black phosphorus 2D Mater. (at press) (arXiv:1410.2608)
22. Wang L et al 2013 One-dimensional electrical contact to a twodimensional material Science 342 614-7
23. Nilges T, KerstingMand Pfeifer T 2008 A fast low-pressure transport route to large black phosphorus single crystals J. Solid State Chem. 181 1707-11
24. Dean CR et al 2010 Boron nitride substrates for high-quality graphene electronics Nat. Nanotechnology 5 722-6
25. Haigh S J, Gholinia A, Jalil R, Romani S, Britnell L, EliasDC, Novoselov KS, Ponomarenko LA, Geim AKand Gorbachev R 2012 Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices Nat. Mater. 11 764-7
26. Mayorov A S et al 2011 Micrometer-scale ballistic transport in encapsulated graphene at room temperature Nano Lett. 11 2396-9
27. Kaasbjerg K, Thygesen KS and JacobsenKW2012 Phononlimited mobility in n-type single-layer MoS2 from first principles Phys. Rev. B 85 115317
28. Hwang EHand Das Sarma S 2008 Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene Phys. Rev. B 77 115449
29. Mariani E, Pearce A J and von Oppen F 2012 Fictitious gauge fields in bilayer graphene Phys. Rev. B 86 165448
30. Mariani E and von Oppen F 2010 Temperature-dependent resistivity of suspended graphene Phys. Rev. B 82 195403
31. Ochoa H, Castro EV, KatsnelsonMI and Guinea F 2011 Temperature-dependent resistivity in bilayer graphene due to flexural phonons Phys. Rev. B 83 235416
32. MinHK, Hwang EHand Das Sarma S 2011 Chiralitydependent phonon-limited resistivity in multiple layers of graphene Phys. Rev. B 83 161404
33. Castro EV, Ochoa H, KatsnelsonMI, Gorbachev RV, EliasDC, NovoselovKS, Geim AKand Guinea F 2010 limits on charge carrier mobility in suspended graphene due to flexural phonons Phys. Rev. Lett. 105 266601
34. Ando T, Fowler A B and Stern F 1982 Electronic properties of two-dimensional systems Rev. Mod. Phys. 54
35. Coleridge P, Stoner R and Fletcher R 1989 Low-field transport coefficients in GaAs/Ga1-xALxAs heterostructures Phys. Rev. B 39 1120-4
36. Blöchl P E 1994 Projector augmented-wave method Phys. Rev. B 50 17953
37. Perdew J P, BurkeKand ErnzerhofM1996 Generalized gradient approximation made simple Phys. Rev. Lett. 77 3865
38. KresseGand Hafner J 1993 Ab initio molecular dynamics for open-shell transition metals Phys. Rev. B 48 13115
39. KresseGand Furthmüller J 1996 Efficiency of ab initio total energy calculations for metals and semiconductors using a plane-wave basis set Comput. Mater. Sci. 6 15
40. Grimme S 2006 SemiempiricalGGA-type density functional constructed with a long-range dispersion correction J. Comput. Chem. 27 1787
41. Heyd J, ScuseriaGE and Ernzerhof M2003 Hybrid functionals based on a screened Coulomb potential J. Chem. Phys. 118 8207