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Applied Physics Letters

Volumn 98, Issue 22, 2011, Pages

Observation of the memory steps in graphene at elevated temperatures

(4) Rumyantsev, Sergey L a,b Liu, Guanxiong c Shur, Michael S a Balandin, Alexander A c

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b IOFFE INSTITUTE (Russian Federation)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABRUPT CHANGE; ELECTRON GLASS; ELEVATED TEMPERATURE; GATE VOLTAGES; GRAPHENE TRANSISTORS; ZERO GATE;

GRAPHENE; RELAXATION PROCESSES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79958799532 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3596441 Document Type: Article

Times cited : (18)

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